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TDA8922B
2 x 50 W class-D power amplifier
Rev. 01 -- 1 October 2004 Preliminary data sheet
1. General description
The TDA8922B is a high efficiency class-D audio power amplifier with very low dissipation. The typical output power is 2 x 50 W. The device is available in the HSOP24 power package and in the DBS23P through-hole power package. The amplifier operates over a wide supply voltage range from 12.5 V to 30 V and consumes a very low quiescent current.
2. Features
s s s s s s s s s s s s Zero dead time switching Advanced current protection: output current limiting Smooth start-up: no pop-noise due to DC offset High efficiency Operating supply voltage from 12.5 V to 30 V Low quiescent current Usable as a stereo Single-Ended (SE) amplifier or as a mono amplifier in Bridge-Tied Load (BTL) Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in Bridge-Tied Load (BTL) High supply voltage ripple rejection Internal switching frequency can be overruled by an external clock Full short-circuit proof across load and to supply lines Thermally protected.
3. Applications
s s s s s Television sets Home-sound sets Multimedia systems All mains fed audio systems Car audio (boosters).
Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
4. Quick reference data
Table 1: Quick reference data Conditions Min 12.5 no load; no filter; no RC-snubber network connected RL = 6 ; THD = 10 %; VP = 26 V RL = 8 ; THD = 10 %; VP = 21 V Mono bridge-tied load configuration Po output power RL = 8 ; THD = 10 %; VP = 21 V 88 W Typ 26 50 Max 30 65 Unit V mA Symbol Parameter General; VP = 26 V VP Iq(tot) supply voltage total quiescent supply current
Stereo single-ended configuration Po output power 50 25 W W
5. Ordering information
Table 2: Ordering information Package Name TDA8922BTH TDA8922BJ HSOP24 DBS23P Description plastic; heatsink small outline package; 24 leads; low stand-off height plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm) Version SOT566-3 SOT411-1 Type number
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Preliminary data sheet
Rev. 01 -- 1 October 2004
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
6. Block diagram
VDDA2 3 (20) VDDA1 10 (4) VDDP2 23 (16) VDDP1 14 (8) 15 (9)
STABI PROT 18 (12) 13 (7) RELEASE1
BOOT1
IN1M IN1P
9 (3) 8 (2) INPUT STAGE PWM MODULATOR
CONTROL AND ENABLE1 HANDSHAKE
SWITCH1
DRIVER HIGH 16 (10) DRIVER LOW VSSP1 OUT1
SGND1 OSC MODE
11 (5) 7 (1) 6 (23)
mute STABI
OSCILLATOR MODE
MANAGER
TEMPERATURE SENSOR CURRENT PROTECTION VOLTAGE PROTECTION
TDA8922BTH (TDA8922BJ)
VDDP2 22 (15) BOOT2
SGND2
2 (19) mute ENABLE2 CONTROL SWITCH2 AND HANDSHAKE RELEASE2 DRIVER HIGH 21 (14) DRIVER LOW 17 (11) VSSP1 20 (13) VSSP2 OUT2
IN2P IN2M
5 (22) 4 (21) INPUT STAGE PWM MODULATOR
1 (18) VSSA2
12 (6) VSSA1
24 (17) VSSD
19 (-) n.c.
coa022
(1) Pin numbers in parenthesis refer to the TDA8922BJ.
Fig 1. Block diagram.
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Preliminary data sheet
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
7. Pinning information
7.1 Pinning
OSC IN1P IN1M VDDA1 SGND1 VSSD 24 VDDP2 23 BOOT2 22 OUT2 21 VSSP2 20 n.c. 19 STABI 18 VSSP1 17 OUT1 16 BOOT1 15 VDDP1 14 PROT 13
001aab170
1 2 3 4 5 6 7 8 9
1 2 3 4 5
VSSA1 VSSA2 SGND2 VDDA2 IN2M IN2P MODE OSC IN1P IN1M PROT VDDP1 BOOT1
OUT1 10 VSSP1 11 STABI 12 VSSP2 13 OUT2 14 BOOT2 15 VDDP2 16 VSSD 17 VSSA2 18 SGND2 19 VDDA2 20 IN2M 21 IN2P 22 MODE 23
001aab171
TDA8922BTH
6 7 8 9
TDA8922BJ
10 VDDA1 11 SGND1 12 VSSA1
Fig 2. Pin configuration TDA8922BTH.
Fig 3. Pin configuration TDA8922BJ.
7.2 Pin description
Table 3: Symbol VSSA2 SGND2 VDDA2 IN2M IN2P MODE OSC IN1P IN1M VDDA1
9397 750 13357
Pin description Pin TDA8922BTH TDA8922BJ 1 2 3 4 5 6 7 8 9 10 18 19 20 21 22 23 1 2 3 4 negative analog supply voltage for channel 2 signal ground for channel 2 positive analog supply voltage for channel 2 negative audio input for channel 2 positive audio input for channel 2 mode selection input: Standby; Mute or Operating mode oscillator frequency adjustment or tracking input positive audio input for channel 1 negative audio input for channel 1 positive analog supply voltage for channel 1
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Description
Preliminary data sheet
Rev. 01 -- 1 October 2004
4 of 32
Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
Pin description ...continued Pin TDA8922BTH TDA8922BJ 11 12 13 14 15 16 17 18 19 20 21 22 23 24 5 6 7 8 9 10 11 12 13 14 15 16 17 Description signal ground for channel 1 negative analog supply voltage for channel 1 decoupling capacitor for protection (OCP) positive power supply voltage for channel 1 bootstrap capacitor for channel 1 PWM output from channel 1 negative power supply voltage for channel 1 decoupling of internal stabilizer for logic supply not connected negative power supply voltage for channel 2 PWM output from channel 2 bootstrap capacitor for channel 2 positive power supply voltage for channel 2 negative digital supply voltage
Table 3: Symbol SGND1 VSSA1 PROT VDDP1 BOOT1 OUT1 VSSP1 STABI n.c. VSSP2 OUT2 BOOT2 VDDP2 VSSD
8. Functional description
8.1 General
The TDA8922B is a two channel audio power amplifier using class-D technology. The audio input signal is converted into a digital Pulse Width Modulated (PWM) signal via an analog input stage and PWM modulator. To enable the output power transistors to be driven, this digital PWM signal is applied to a control and handshake block and driver circuits for both the high side and low side. In this way a level shift is performed from the low power digital PWM signal (at logic levels) to a high power PWM signal which switches between the main supply lines. A 2nd-order low-pass filter converts the PWM signal to an analog audio signal across the loudspeakers. The TDA8922B one-chip class-D amplifier contains high power D-MOS switches, drivers, timing and handshaking between the power switches and some control logic. For protection a temperature sensor and a maximum current detector are built-in. The two audio channels of the TDA8922B contain two PWMs, two analog feedback loops and two differential input stages. It also contains circuits common to both channels such as the oscillator, all reference sources, the mode functionality and a digital timing manager. The TDA8922B contains two independent amplifier channels with high output power, high efficiency, low distortion and a low quiescent current. The amplifier channels can be connected in the following configurations:
* Mono Bridge-Tied Load (BTL) amplifier * Stereo Single-Ended (SE) amplifiers.
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Preliminary data sheet
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
The amplifier system can be switched in three operating modes with pin MODE:
* Standby mode; with a very low supply current * Mute mode; the amplifiers are operational; but the audio signal at the output is
suppressed by disabling the VI-converter input stages
* Operating mode; the amplifiers fully are operational with output signal.
To ensure pop-noise free start-up the DC output offset voltage is applied gradually to the output between Mute mode and Operating mode. The bias current setting of the VI converters is related to the voltage on the MODE pin; in Mute mode the bias current setting of the VI converters is zero (VI converters disabled) and in Operating mode the bias current is at maximum. The time constant required to apply the DC output offset voltage gradually between mute and operating can be generated via an RC-network on the MODE pin. An example of a switching circuit for driving pin MODE is illustrated in Figure 4. If the capacitor C is left out of the application the voltage on the MODE pin will be applied with a much smaller time-constant, which might result in audible pop-noises during start-up (depending on DC output offset voltage and used loudspeaker). In order to fully charge the coupling capacitors at the inputs, the amplifier will remain automatically in the Mute mode before switching to the Operating mode. A complete overview of the start-up timing is given in Figure 5.
+5 V standby/ mute R MODE pin R C mute/on SGND
001aab172
Fig 4. Example of mode selection circuit.
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Preliminary data sheet
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
audio output
modulated PWM Vmode 50 % duty cycle operating
> 4.2 V
2.2 V < Vmode < 3 V
mute
0 V (SGND)
standby 100 ms 50 ms > 350 ms time
audio output
modulated PWM Vmode 50 % duty cycle operating
> 4.2 V
2.2 V < Vmode < 3 V
mute
0 V (SGND)
standby 100 ms 50 ms
coa024
> 350 ms
time
When switching from standby to mute, there is a delay of 100 ms before the output starts switching. The audio signal is available after Vmode has been set to operating, but not earlier than 150 ms after switching to mute. For pop-noise free start-up it is recommended that the time constant applied to the MODE pin is at least 350 ms for the transition between mute and operating. When switching directly from standby to operating, there is a first delay of 100 ms before the outputs starts switching. The audio signal is available after a second delay of 50 ms. For pop-noise free start-up it is recommended that the time constant applied to the MODE pin is at least 350 ms for the transition between standby and operating
Fig 5. Timing on mode selection input.
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Preliminary data sheet
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
8.2 Pulse width modulation frequency
The output signal of the amplifier is a PWM signal with a carrier frequency of approximately 317 kHz. Using a 2nd-order LC demodulation filter in the application results in an analog audio signal across the loudspeaker. This switching frequency is fixed by an external resistor ROSC connected between pin OSC and VSSA. An optimal setting for the carrier frequency is between 300 kHz and 350 kHz. Using an external resistor of 30 k on the OSC pin, the carrier frequency is set to 317 kHz. If two or more class-D amplifiers are used in the same audio application, it is advisable to have all devices operating at the same switching frequency by using an external clock circuit.
8.3 Protections
The following protections are included in TDA8922B:
* * * *
OverTemperature Protection (OTP) OverCurrent Protection (OCP) Window Protection (WP) Supply voltage protections: - UnderVoltage Protection (UVP) - OverVoltage Protection (OVP) - UnBalance Protection (UBP).
The reaction of the device on the different fault conditions differs per protection:
8.3.1 OverTemperature Protection (OTP)
If the junction temperature Tj > 150 C, then the power stage will shut-down immediately. The power stage will start switching again if the temperature drops to approximately 130 C, thus there is a hysteresis of approximately 20 C.
8.3.2 OverCurrent Protection (OCP)
When the loudspeaker terminals are short-circuited or if one of the demodulated outputs of the amplifier is short-circuited to one of the supply lines, this will be detected by the OverCurrent Protection (OCP). If the output current exceeds the maximum output current of 5 A, this current will be limited by the amplifier to 5 A while the amplifier outputs remain switching (the amplifier is NOT shut-down completely). The amplifier can distinguish between an impedance drop of the loudspeaker and low-ohmic short across the load. In the TDA8922B this impedance threshold (Zth) depends on the supply voltage used. When a short is made across the load causing the impedance to drop below the threshold level (< Zth) then the amplifier is switched off completely and after a time of 100 ms it will try to restart again. If the short circuit condition is still present after this time this cycle will be repeated. The average dissipation will be low because of this low duty cycle.
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Preliminary data sheet
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TDA8922B
2 x 50 W class-D power amplifier
In case of an impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same protection will be activated; the maximum output current is again limited to 5 A, but the amplifier will NOT switch-off completely (thus preventing audio holes from occurring). Result will be a clipping output signal without any artefacts. See also Section 13.6 for more information on this maximum output current limiting feature.
8.3.3 Window Protection (WP)
During the start-up sequence, when pin MODE is switched from standby to mute, the conditions at the output terminals of the power stage are checked. In the event of a short-circuit at one of the output terminals to VDD or VSS the start-up procedure is interrupted and the system waits for open-circuit outputs. Because the test is done before enabling the power stages, no large currents will flow in the event of a short-circuit. This system is called Window Protection (WP) and protects for short-circuits at both sides of the output filter to both supply lines. When there is a short-circuit from the power PWM output of the power stage to one of the supply lines (before the demodulation filter) it will also be detected by the start-up safety test. Practical use of this test feature can be found in detection of short-circuits on the printed-circuit board. Remark: This test is operational during (every) start-up sequence at a transition between Standby and Mute mode. However when the amplifier is completely shut-down due to activation of the OverCurrent Protection (OCP) because a short to one of the supply lines is made, then during restart (after 100 ms) the window protection will be activated. As a result the amplifier will not start-up until the short to the supply lines is removed.
8.3.4 Supply voltage protections
If the supply voltage drops below 12.5 V, the UnderVoltage Protection (UVP) circuit is activated and the system will shut-down correctly. If the internal clock is used, this switch-off will be silent and without pop noise. When the supply voltage rises above the threshold level, the system is restarted again after 100 ms. If the supply voltage exceeds 33 V the OverVoltage Protection (OVP) circuit is activated and the power stages will shut-down. It is re-enabled as soon as the supply voltage drops below the threshold level. So in this case no timer of 100 ms is started. An additional UnBalance Protection (UBP) circuit compares the positive analog (VDDA) and the negative analog (VSSA) supply voltages and is triggered if the voltage difference between them exceeds a certain level. This level depends on the sum of both supply voltages. An expression for the unbalanced threshold level is as follows: Vth(ub) 0.15 x (VDDA + VSSA). When the supply voltage difference drops below the threshold level, the system is restarted again after 100 ms. Example: With a symmetrical supply of 30 V, the protection circuit will be triggered if the unbalance exceeds approximately 9 V; see also Section 13.7. In Table 4 an overview is given of all protections and the effect on the output signal.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
Overview protections TDA8922B Complete shut-down Y N [2] Y [3] Y Y Y Restart directly Y [1] Y [2] Y N Y N Restart every 100 ms N [1] N [2] N Y N Y
Table 4: OTP OCP WP UVP OVP UBP
[1] [2] [3]
Protection name
Hysteresis of 20 degrees will influence restart timing depending on heatsink size. Only complete shut-down of amplifier if short-circuit impedance is below threshold of 1 . In all other cases current limiting: resulting in clipping output signal. Fault condition detected during (every) transition between standby-to-mute and during restart after activation of OCP (short to one of the supply lines).
8.4 Differential audio inputs
For a high common mode rejection ratio and a maximum of flexibility in the application, the audio inputs are fully differential. By connecting the inputs anti-parallel the phase of one of the channels can be inverted, so that a load can be connected between the two output filters. In this case the system operates as a mono BTL amplifier and with the same loudspeaker impedance an approximately four times higher output power can be obtained. The input configuration for a mono BTL application is illustrated in Figure 6. In the stereo single-ended configuration it is also recommended to connect the two differential inputs in anti-phase. This has advantages for the current handling of the power supply at low signal frequencies.
IN1P IN1M Vin IN2P IN2M
OUT1
SGND
OUT2
power stage
mbl466
Fig 6. Input configuration for mono BTL application.
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TDA8922B
2 x 50 W class-D power amplifier
9. Limiting values
Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VP IORM Tstg Tamb Tj
[1]
Parameter supply voltage repetitive peak current in output pin storage temperature ambient temperature junction temperature
Conditions maximum output current limiting
[1]
Min 5 -55 -40 -
Max 30 +150 +85 150
Unit V A C C C
Current limiting concept. See also Section 13.6.
10. Thermal characteristics
Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient TDA8922BTH TDA8922BJ Rth(j-c) thermal resistance from junction to case TDA8922BTH TDA8922BJ
[1] See also Section 13.5.
Conditions
[1]
Typ 35 35
[1]
Unit K/W K/W K/W K/W
in free air in free air
1.3 1.3
11. Static characteristics
Table 7: Static characteristics VP = 26 V; fosc = 317 kHz; Tamb = 25 C; unless otherwise specified. Symbol Supply VP Iq(tot) supply voltage total quiescent supply current standby supply current input voltage input current input voltage for Standby mode input voltage for Mute mode input voltage for Operating mode VI = 5.5 V
[2] [3] [2] [3] [2] [3] [2] [1]
Parameter
Conditions
Min
Typ
Max Unit 30 65 V mA
12.5 26 50
no load; no filter; no snubber network connected
Istb VI II Vstb Vmute Von
0 0 2.2 4.2
150 100 -
500 6 300 0.8 3.0 6
A V A V V V
Mode select input; pin MODE
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TDA8922B
2 x 50 W class-D power amplifier
Table 7: Static characteristics ...continued VP = 26 V; fosc = 317 kHz; Tamb = 25 C; unless otherwise specified. Symbol VI VOO(SE)(mute) VOO(SE)(on) VOO(BTL)(mute) VOO(BTL)(on) Parameter DC input voltage mute SE output offset voltage operating SE output offset voltage mute BTL output offset voltage operating BTL output offset voltage stabilizer output voltage temperature protection activation hysteresis on temperature protection
The circuit is DC adjusted at VP = 12.5 V to 30 V. With respect to SGND (0 V). The transition between Standby and Mute mode contain hysteresis, while the slope of the transition between Mute and Operating mode is determined by the time-constant on the MODE pin see Figure 7. DC output offset voltage is applied to the output during the transition between Mute and Operating mode in a gradual way.The slope of the dV/dt caused by any DC output offset is determined by the time-constant on the MODE pin.
[4] [4]
Conditions
[2]
Min -
Typ 0 -
Max Unit 15 150 21 210 V mV mV mV mV
Audio inputs; pins IN1M, IN1P, IN2P and IN2M Amplifier outputs; pins OUT1 and OUT2
Stabilizer output; pin STABI Vo(stab) mute and operating; with respect to VSSP1 11 12.5 15 V
Temperature protection Tprot Thys 150 20 C C
[1] [2] [3] [4]
slope is directly related to time-constant on the MODE pin
VO (V) Voo (on) STBY MUTE ON
Voo (mute)
0
0.8
2.2
3.0
4.2 5.5 VMODE (V)
coa021
Fig 7. Behavior of mode selection pin MODE.
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TDA8922B
2 x 50 W class-D power amplifier
12. Dynamic characteristics
12.1 Switching characteristics
Table 8: Switching characteristics VDD = 26 V; Tamb = 25 C; unless otherwise specified. Symbol fosc fosc(int) Parameter typical internal oscillator frequency internal oscillator frequency range high-level voltage on pin OSC trip level for tracking on pin OSC frequency range for tracking Conditions ROSC = 30.0 k Min 290 210 Typ 317 Max 344 600 Unit kHz kHz Internal oscillator
External oscillator or frequency tracking VOSC VOSC(trip) ftrack SGND + 4.5 SGND + 5 210 SGND + 6 V V kHz
SGND + 2.5 600
12.2 Stereo and dual SE application
Table 9: Stereo and dual SE application characteristics VP = 26 V; RL = 6 ; fi = 1 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Po Parameter output power Conditions RL = 4 ; VP = 21 V THD = 0.5 % THD = 10 % RL = 6 ; VP = 26 V THD = 0.5 % THD = 10 % RL = 8 ; VP = 21 V THD = 0.5 % THD = 10 % RL = 8 ; VP = 26 V THD = 0.5 % THD = 10 % THD total harmonic distortion Po = 1 W fi = 1 kHz fi = 6 kHz Gv(cl) SVRR closed loop voltage gain supply voltage ripple rejection operating fi = 100 Hz fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz
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Min
[2]
Typ 32 40 40 50 20 25 32 40 0.02 0.07 30 55 50 55 80
Max 0.05 31 -
Unit W W W W W W W W % % dB dB dB dB dB
13 of 32
[2]
[2]
[2]
[3]
29
[4]
40
[4] [4]
-
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Preliminary data sheet
Rev. 01 -- 1 October 2004
Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
Table 9: Stereo and dual SE application characteristics ...continued VP = 26 V; RL = 6 ; fi = 1 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Zi Vn(o) Parameter input impedance noise output voltage operating Rs = 0 mute cs Gv Vo(mute) CMRR channel separation channel unbalance output signal in mute common mode rejection ratio Vi(CM) = 1 V (RMS)
[8] [5] [6] [7]
Conditions
Min 45 -
Typ 68 210 160 70 100 75
Max 1 -
Unit k V V dB dB V dB
[1] [2] [3] [4] [5] [6] [7] [8]
RsL is the series resistance of inductor of low-pass LC filter in the application. Output power is measured indirectly; based on RDSon measurement. See also Section 13.3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is guaranteed but may not be 100 % tested. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of Rs. Po = 1 W; Rs = 0 ; fi = 1 kHz. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
12.3 Mono BTL application
Table 10: Mono BTL application characteristics VP = 26 V; RL = 8 ; fi = 1 kHz; fosc = 317 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Po Parameter output power Conditions RL = 6 ; VP = 16 V THD = 0.5 % THD = 10 % RL = 8 ; VP = 21 V THD = 0.5 % THD = 10 % THD total harmonic distortion Po = 1 W fi = 1 kHz fi = 6 kHz Gv(cl) SVRR closed loop voltage gain supply voltage ripple rejection operating fi = 100 Hz fi = 1 kHz mute; fi = 100 Hz standby; fi = 100 Hz Zi input impedance
[4] [4] [4] [3] [2] [2]
Min 35 70 22
Typ 48 60 71 88 0.02 0.07 36 80 80 80 80 34
Max 0.05 37 -
Unit W W W W % % dB dB dB dB dB k
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TDA8922B
2 x 50 W class-D power amplifier
Table 10: Mono BTL application characteristics ...continued VP = 26 V; RL = 8 ; fi = 1 kHz; fosc = 317 kHz; RsL < 0.1 [1]; Tamb = 25 C; unless otherwise specified. Symbol Vn(o) Parameter noise output voltage Conditions operating Rs = 0 mute Vo(mute) CMRR output signal in mute common mode rejection ratio Vi(CM) = 1 V (RMS)
[5] [6] [7]
Min -
Typ 300 220 200 75
Max -
Unit V V V dB
[1] [2] [3] [4] [5] [6] [7]
RsL is the series resistance of inductor of low-pass LC filter in the application. Output power is measured indirectly; based on RDSon measurement. See also Section 13.3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is guaranteed but may not be 100 % tested. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 . B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of Rs. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
13. Application information
13.1 BTL application
When using the power amplifier in a mono BTL application the inputs of both channels must be connected in parallel and the phase of one of the inputs must be inverted (see Figure 6). In principle the loudspeaker can be connected between the outputs of the two single-ended demodulation filters.
13.2 MODE pin
For pop-noise free start-up an RC time-constant must be applied on the MODE pin. The bias-current setting of the VI-converter input is directly related to the voltage on the MODE pin. In turn the bias-current setting of the VI converters is directly related to the DC output offset voltage. Thus a slow dV/dt on the MODE pin results in a slow dV/dt for the DC output offset voltage, resulting in pop-noise free start-up. A time-constant of 500 ms is sufficient to guarantee pop-noise free start-up (see also Figure 4, 5 and 7).
13.3 Output power estimation
The achievable output powers in several applications (SE and BTL) can be estimated using the following expressions: SE:
2 RL ------------------- x V P x ( 1 - t min x f osc ) R L + 0.6 = ---------------------------------------------------------------------------------------2 x RL
P o ( 1% )
(1)
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TDA8922B
2 x 50 W class-D power amplifier
Maximum current (internally limited to 5 A): V P x ( 1 - t min x f osc ) I o ( peak ) = ----------------------------------------------------R L + 0.6 BTL:
2 RL ------------------- x 2V P x ( 1 - t min x f osc ) R L + 1.2 = -------------------------------------------------------------------------------------------2 x RL
(2)
P o ( 1% )
(3)
Maximum current (internally limited to 5 A): 2V P x ( 1 - t min x f osc ) I o ( peak ) = --------------------------------------------------------R L + 1.2 Variables: RL = load impedance fosc = oscillator frequency tmin = minimum pulse width (typical 150 ns). VP = single-sided supply voltage (so, if supply is 30 V symmetrical, then VP = 30 V) Po(1%) = output power just at clipping Po(10%) = output power at THD = 10 % Po(10%) = 1.24 x Po(1%). (4)
13.4 External clock
When using an external clock the following accuracy of the duty cycle of the external clock has to be taken into account: 47.5 % < < 52.5 %. If two or more class-D amplifiers are used in the same audio application, it is strongly recommended that all devices run at the same switching frequency.This can be realized by connecting all OSC pins together and feed them from an external central oscillator. Using an external oscillator it is necessary to force pin OSC to a DC-level above SGND for switching from the internal to an external oscillator. In this case the internal oscillator is disabled and the PWM will be switched on the external frequency. The frequency range of the external oscillator must be in the range as specified in the switching characteristics; see Section 12.1. In an application circuit:
* Internal oscillator: ROSC connected between pin OSC and VSSA * External oscillator: connect the oscillator signal between pins OSC and SGND; delete
ROSC and COSC.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
13.5 Heatsink requirements
In some applications it may be necessary to connect an external heatsink to the TDA8922B. Limiting factor is the 150 C maximum junction temperature Tj(max) which cannot be exceeded. The expression below shows the relationship between the maximum allowable power dissipation and the total thermal resistance from junction to ambient: T j ( max ) - T amb R th ( j - a ) = ------------------------------------P diss Pdiss is determined by the efficiency () of the TDA8922B. The efficiency measured in the TDA8922B as a function of output power is given in Figure 19. The power dissipation can be derived as function of output power Figure 18. The derating curves (given for several values of the Rth(j-a)) are illustrated in Figure 8. A maximum junction temperature Tj = 150 C is taken into account. From Figure 8 the maximum allowable power dissipation for a given heatsink size can be derived or the required heatsink size can be determined at a required dissipation level.
30 Pdiss (W)
mbl469
(1)
20
(2)
10
(3) (4) (5)
0 0 20 40 60 80 100 Tamb (C)
(1) Rth(j-a) = 5 K/W. (2) Rth(j-a) = 10 K/W. (3) Rth(j-a) = 15 K/W. (4) Rth(j-a) = 20 K/W. (5) Rth(j-a) = 35 K/W.
Fig 8. Derating curves for power dissipation as a function of maximum ambient temperature.
13.6 Output current limiting
To guarantee the robustness of the class-D amplifier the maximum output current which can be delivered by the output stage is limited. An advanced OverCurrent Protection (OCP) is included for each output power switch. When the current flowing through any of the power switches exceeds the defined internal threshold of 5 A (e.g. in case of a short-circuit to the supply lines or a short-circuit across the load) the maximum output current of the amplifier will be regulated to 5 A.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
The TDA8922B amplifier can distinguish between a low-ohmic short circuit condition and other overcurrent conditions like dynamic impedance drops of the used loudspeakers. The impedance threshold (Zth) depends on the supply voltage used. Depending on the impedance of the short circuit the amplifier will react as follows: 1. Short-circuit impedance > Zth: The maximum output current of the amplifier is regulated to 5 A, but the amplifier will not shut-down its PWM outputs. Effectively this results in a clipping output signal across the load (behavior is very similar to voltage clipping). 2. Short-circuit impedance < Zth: The amplifier will limit the maximum output current to 5 A and at the same time the capacitor on the PROT pin is discharged. When the voltage across this capacitor drops below an internal threshold voltage the amplifier will shut-down completely and an internal timer will be started. A typical value for the capacitor on the PROT pin is 220 pF. After a fixed time of 100 ms the amplifier is switched on again. If the requested output current is still too high the amplifier will switch-off again. Thus the amplifier will try to switch to the Operating mode every 100 ms. The average dissipation will be low in this situation because of this low duty cycle. If the overcurrent condition is removed the amplifier will remain in Operating mode once restarted. In this way the TDA8922B amplifier is fully robust against short circuit conditions while at the same time so-called audio holes as a result of loudspeaker impedance drops are eliminated.
13.7 Pumping effects
In a typical stereo half-bridge (Single-Ended (SE)) application the TDA8922B class-D amplifier is supplied by a symmetrical voltage (e.g VDD = +26 V and VSS = -26 V). When the amplifier is used in a SE configuration, a so-called `pumping effect' can occur. During one switching interval, energy is taken from one supply (e.g. VDD), while a part of that energy is delivered back to the other supply line (e.g. VSS) and visa versa. When the voltage supply source cannot sink energy, the voltage across the output capacitors of that voltage supply source will increase: the supply voltage is pumped to higher levels. The voltage increase caused by the pumping effect depends on:
* * * * *
Speaker impedance Supply voltage Audio signal frequency Value of decoupling capacitors on supply lines Source and sink currents of other channels.
The pumping effect should not cause a malfunction of either the audio amplifier and/or the voltage supply source. For instance, this malfunction can be caused by triggering of the undervoltage or overvoltage protection or unbalance protection of the amplifier. Best remedy for pumping effects is to use the TDA8922B in a mono full-bridge application or in case of stereo half-bridge application adapt the power supply (e.g. increase supply decoupling capacitors).
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
13.8 Application schematic
Notes to the application schematic:
* A solid ground plane around the switching amplifier is necessary to prevent emission. * 100 nF capacitors must be placed as close as possible to the power supply pins of the
TDA8922BTH.
* The internal heat spreader of the TDA8922BTH is internally connected to VSS. * The external heatsink must be connected to the ground plane. * Use a thermal conductive electrically non-conductive Sil-Pad(R) between the backside
of the TDA8922BTH and a small external heatsink.
* The differential inputs enable the best system level audio performance with
unbalanced signal sources. In case of hum due to floating inputs, connect the shielding or source ground to the amplifier ground. Jumpers J1 and J2 are open on set level and are closed on the stand-alone demo board.
* Minimum total required capacity per power supply line is 3300 F.
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xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
Preliminary data sheet Rev. 01 -- 1 October 2004
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13357
Philips Semiconductors
R2
VDDP VDDA VDDP
R1 5.6 k R3 5.6 k
L1 BEAD CON1 +25 V VDD 1 GND 2 3 -25 V VSS
C1 100 nF C2 47 F/35 V
10
C3 470 F/35 V
DZ1 5V6 S1 VSSP ON/OFF VSSA S2
R4 5.6 k C4
C7 100 nF
C5 47 F/35 V
C6 470 F/35 V
100 F/10 V
OPERATE/MUTE VDDP
C8
L2 BEAD
R5 10
VSSA
VSSP
VDDA
VSSA
C9 100 nF
R6 30 k C14 100 nF
47 F/ 63 V C15 100 nF C16 100 nF
FB GND
C12 100 nF
C13 100 nF
FB GND MODE
VDDP
C10 220 pF
VSSP
C11 220 pF
SINGLE ENDED OUTPUT FILTER VALUES LS1/LS2 L3/L4 C22/C31 2 4 6 8 10 H 22 H 33 H 47 H 1 F 680 nF 470 nF 330 nF
VDDA1
VDDP1
VSSA1
IN1
C17 1 nF
VSSP1
OSC
R8 5.6 k R10
C18 470 nF C20 470 nF C19 220 pF
IN1P 10 8
12
7
6
14
17 16 OUT1
C21 15 nF
R7 10
L3
R9 22 C22 C24 100 nF
OUT1P LS1 OUT1M
IN1M SGND1
9 11 U1
C23 1 nF C25 1 nF
5.6 k
15
BOOT1
FB GND SGND2
R11 5.6 k C26 470 nF C29 470 nF C28 220 pF
TDA8922BTH
2 5 21 OUT2
R13 10
IN2P
22
BOOT2 C27
15 nF
FB GND L4
OUT2M LS2
R14 22
2 x 50 W class-D power amplifier
IN2
C30 1 nF
R12 5.6 k
IN2M
4 3 VDDA2 1 VSSA2 13 PROT 19 n.c. 24 VSSD 18 STABI 23 VDDP2 20 VSSP2
OUT2P
C31 C40 220 pF C41 220 pF
FB GND
C34 100 nF
C35 100 nF
FB GND
C33 220 pF C36 100 nF
C37 100 nF
C38 100 nF
C39 100 nF
FB GND
C32 100 nF
TDA8922B
001aab198
VDDA
VSSA
VSSA
VSSP
VDDP
VSSP
VDDP
VSSP
20 of 32
Fig 9. TDA8922BTH application diagram.
Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
13.9 Curves measured in reference design
102 (THD + N)/S (%) 10
001aab199
102 (THD + N)/S (%) 10
001aab200
1
(1) (2) (3)
1
(1)
10-1
10-1
(2)
(3)
10-2
10-2
10-3 10-2
10-1
1
10
102 103 Po (W)
10-3 10-2
10-1
1
10 Po (W)
102
VP = 26 V; 2 x 6 SE configuration. (1) f = 6 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
VP = 26 V; 2 x 8 SE configuration. (1) f = 6 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE configuration with 2 x 6 load.
102 (THD + N)/S (%) 10
001aab201
Fig 11. (THD + N)/S as a function of output power; SE configuration with 2 x 8 load.
102 (THD + N)/S (%) 10
001aab202
1
(1)
1
10-1
(2)
10-1
(1)
10-2
(3)
10-2
(2)
10-3 10-2
10-1
1
10
102 103 Po (W)
10-3 10
102
103
104 f (Hz)
105
VP = 21 V; 1 x 8 BTL configuration. (1) f = 6 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
VP = 26 V; 2 x 6 SE configuration. (1) Po = 10 W. (2) Po = 1 W.
Fig 12. (THD + N)/S as a function of output power; BTL configuration with 8 load.
Fig 13. (THD + N)/S as function of frequency, SE configuration with 2 x 6 load.
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TDA8922B
2 x 50 W class-D power amplifier
102 (THD + N)/S (%) 10
001aab203
102 (THD + N)/S (%) 10
001aab204
1
1
10-1
(1) (2)
10-1
(1)
10-2
10-2
(2)
10-3 10
102
103
104 f (Hz)
105
10-3 10
102
103
104 f (Hz)
105
VP = 26 V; 2 x 8 SE configuration. (1) Po = 10 W. (2) Po = 1 W.
VP = 21 V; 1 x 8 BTL configuration. (1) Po = 10 W. (2) Po = 1 W.
Fig 14. (THD + N)/S as function of frequency, SE configuration with 2 x 8 load.
0 cs (dB) -20
001aab205
Fig 15. (THD + N)/S as function of frequency, BTL configuration with 8 load.
0 cs (dB) -20
001aab206
-40
-40
-60
(1) (2)
-60
(1) (2)
-80
-80
-100 10
102
103
104 f (Hz)
105
-100 10
102
103
104 f (Hz)
105
VP = 26 V; 2 x 6 SE configuration. (1) Po = 10 W. (2) Po = 1 W.
VP = 26 V; 2 x 8 SE configuration. (1) Po = 10 W. (2) Po = 1 W.
Fig 16. Channel separation as a function of frequency; SE configuration with 2 x 6 load.
Fig 17. Channel separation as a function of frequency; SE configuration with 2 x 8 load.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
20 Ptot (W) 16
001aab207
100 (%)
(1) (2) (3)
001aab208
(1)
80
12
(2)
60
(3)
8
40
4
20
0 10-2
10-1
1
10
102 103 Po (W)
0 0 40 80 120 160 200 Po (W)
f = 1 kHz. (1) VP = 21 V; 1 x 8 BTL configuration. (2) VP = 26 V; 2 x 6 SE configuration. (3) VP = 26 V; 2 x 8 SE configuration.
f = 1 kHz. (1) VP = 26 V; 2 x 8 SE configuration. (2) VP = 26 V; 2 x 6 SE configuration. (3) VP = 21 V; 1 x 8 BTL configuration.
Fig 18. Power dissipation as a function of total output power.
120 Po (W)
(1)
Fig 19. Efficiency as a function of total output power.
001aab209
200 Po (W) 160
001aab210
80 120
(1) (2) (3)
80
(2) (3)
40 40
0 10 15 20 25 30 VS (V) 35
0 10 15 20 25 30 VS (V) 35
(THD + N)/S = 0.5 %; f = 1 kHz. (1) 1 x 8 BTL configuration. (2) 2 x 6 SE configuration. (3) 2 x 8 SE configuration.
(THD + N)/S = 10 %; f = 1 kHz. (1) 1 x 8 BTL configuration. (2) 2 x 6 SE configuration. (3) 2 x 8 SE configuration.
Fig 20. Output power as a function of supply voltage; (THD + N)/S = 0.5 %.
Fig 21. Output power as a function of supply voltage; (THD + N)/S = 10 %.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
45 G (dB) 40
001aab211
45 G (dB) 40
(1)
001aab212
35
(1)
35
(2)
30
(2) (3)
30
(3)
25
25
20 10
102
103
104 f (Hz)
105
20 10
102
103
104 f (Hz)
105
Vi = 100 mV; Rs = 5.6 k; Ci = 330 pF. (1) VP = 21 V; 1 x 8 BTL configuration. (2) VP = 26 V; 2 x 6 SE configuration. (3) VP = 26 V; 2 x 8 SE configuration.
Vi = 100 mV; Rs = 0 ; Ci = 330 pF. (1) VP = 21 V; 1 x 8 BTL configuration. (2) VP = 26 V; 2 x 6 SE configuration. (3) VP = 26 V; 2 x 8 SE configuration.
Fig 22. Gain as a function of frequency; Rs = 5.6 k and Ci = 330 pF.
0 SVRR (dB) -20
001aab213
Fig 23. Gain as a function of frequency; Rs = 0 and Ci = 330 pF.
10 1 10-1
001aab214
Vo (V)
-40
(1)
10-2 10-3
(2) (3)
-60
10-4 10-5 10-6 0 2 4 Vmode (V) 6
-80
-100 10
102
103
104 f (Hz)
105
VP = 26 V; Vripple = 2 V (p-p). (1) Both supply lines rippled. (2) Both supply lines rippled in anti phase. (3) One supply line rippled.
Vi = 100 mV; f = 1 kHz.
Fig 24. SVRR as a function of frequency.
Fig 25. Output voltage as a function of mode voltage.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
120 S/N (dB) 80
001aab215
(1)
(2)
40
0 10-2
10-1
1
10
102 103 Po (W)
VP = 26 V; Rs = 5.6 k; 20 kHz AES17 filter. (1) 2 x 6 SE configuration and 2 x 8 SE configuration. (2) 1 x 8 BTL configuration.
Fig 26. S/N ratio as a function of output power.
14. Test information
14.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
15. Package outline
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height SOT566-3
E D x
A X
c y E2 HE vM A
D1 D2 1 pin 1 index Q A2 E1 A4 Lp detail X 24 Z e bp 13 wM (A3) A 12
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A2 max. 3.5 3.5 3.2 A3 0.35 A4(1) bp c D(2) D1 D2 1.1 0.9 E(2) 11.1 10.9 E1 6.2 5.8 E2 2.9 2.5 e 1 HE 14.5 13.9 Lp 1.1 0.8 Q 1.7 1.5 v w x y Z 2.7 2.2 8 0
+0.08 0.53 0.32 16.0 13.0 -0.04 0.40 0.23 15.8 12.6
0.25 0.25 0.03 0.07
Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT566-3 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION
ISSUE DATE 03-02-18 03-07-23
Fig 27. HSOP24 package outline.
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Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
non-concave x D Dh
Eh
view B: mounting base side A2
d
A5 A4
B j
E2 E
E1
L2 L1 L3
L 1 Z e e1 wM 23
Q m
c e2
vM
bp
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT A 2 mm A4 A5 bp c D (1) d D h E (1) e e1 e2 Eh E1 E2 j L L1 L2 L3 m Q v w x
Z (1)
12.2 4.6 1.15 1.65 0.75 0.55 30.4 28.0 12 2.54 1.27 5.08 11.8 4.3 0.85 1.35 0.60 0.35 29.9 27.5
6 10.15 6.2 1.85 3.6 9.85 5.8 1.65 2.8
14 10.7 2.4 1.43 2.1 4.3 0.6 0.25 0.03 45 13 9.9 1.6 0.78 1.8
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT411-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION
ISSUE DATE 98-02-20 02-04-24
Fig 28. DBS23P package outline.
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Rev. 01 -- 1 October 2004
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TDA8922B
2 x 50 W class-D power amplifier
16. Soldering
16.1 Introduction
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing.
16.2 Through-hole mount packages
16.2.1 Soldering by dipping or by solder wave
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
16.2.2 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 C and 400 C, contact may be up to 5 seconds.
16.3 Surface mount packages
16.3.1 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 C to 270 C depending on solder paste material. The top-surface temperature of the packages should preferably be kept:
* below 225 C (SnPb process) or below 245 C (Pb-free process)
- for all BGA, HTSSON..T and SSOP..T packages
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TDA8922B
2 x 50 W class-D power amplifier
- for packages with a thickness 2.5 mm - for packages with a thickness < 2.5 mm and a volume 350 mm3 so called thick/large packages.
* below 240 C (SnPb process) or below 260 C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
16.3.2 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:
* Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
* For packages with leads on two sides and a pitch (e):
- larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end.
* For packages with leads on four sides, the footprint must be placed at a 45 angle to
the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
16.3.3 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 C and 320 C.
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TDA8922B
2 x 50 W class-D power amplifier
16.4 Package related soldering information
Table 11: Mounting Through-hole mount Through-hole-surface mount Surface mount Suitability of IC packages for wave, reflow and dipping soldering methods Package [1] CPGA, HCPGA DBS, DIP, HDIP, RDBS, SDIP, SIL PMFP [4] BGA, HTSSON..T [5], LBGA, LFBGA, SQFP, SSOP..T [5], TFBGA, VFBGA, XSON DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC [7], SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP CWQCCN..L [10], WQCCN..L [10]
[1] [2]
Soldering method Wave suitable suitable [3] not suitable not suitable Reflow [2] - - not suitable suitable Dipping - suitable - -
not suitable [6]
suitable
-
suitable not not recommended [7] [8] recommended [9]
suitable suitable suitable not suitable
- - - -
not suitable
For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. Hot bar soldering or manual soldering is suitable for PMFP packages. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[3] [4] [5]
[6]
[7] [8] [9]
[10] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request.
17. Revision history
Table 12: Revision history Release date 20041001 Data sheet status Preliminary data sheet Change notice Order number 9397 750 13357 Supersedes Document ID TDA8922B_1
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TDA8922B
2 x 50 W class-D power amplifier
18. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
19. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
21. Trademarks
Sil-Pad -- is a registered trademark of The Bergquist Company.
20. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
22. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13357
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
31 of 32
Philips Semiconductors
TDA8922B
2 x 50 W class-D power amplifier
23. Contents
1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.3.1 8.3.2 8.3.3 8.3.4 8.4 9 10 11 12 12.1 12.2 12.3 13 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 13.9 14 14.1 15 16 16.1 16.2 16.2.1 16.2.2 16.3 16.3.1 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pulse width modulation frequency . . . . . . . . . . 8 Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 OverTemperature Protection (OTP) . . . . . . . . . 8 OverCurrent Protection (OCP) . . . . . . . . . . . . . 8 Window Protection (WP). . . . . . . . . . . . . . . . . . 9 Supply voltage protections . . . . . . . . . . . . . . . . 9 Differential audio inputs . . . . . . . . . . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal characteristics. . . . . . . . . . . . . . . . . . 11 Static characteristics. . . . . . . . . . . . . . . . . . . . 11 Dynamic characteristics . . . . . . . . . . . . . . . . . 13 Switching characteristics . . . . . . . . . . . . . . . . 13 Stereo and dual SE application . . . . . . . . . . . 13 Mono BTL application . . . . . . . . . . . . . . . . . . . 14 Application information. . . . . . . . . . . . . . . . . . 15 BTL application . . . . . . . . . . . . . . . . . . . . . . . . 15 MODE pin . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Output power estimation. . . . . . . . . . . . . . . . . 15 External clock . . . . . . . . . . . . . . . . . . . . . . . . . 16 Heatsink requirements . . . . . . . . . . . . . . . . . . 17 Output current limiting. . . . . . . . . . . . . . . . . . . 17 Pumping effects . . . . . . . . . . . . . . . . . . . . . . . 18 Application schematic . . . . . . . . . . . . . . . . . . . 19 Curves measured in reference design . . . . . . 21 Test information . . . . . . . . . . . . . . . . . . . . . . . . 25 Quality information . . . . . . . . . . . . . . . . . . . . . 25 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Through-hole mount packages . . . . . . . . . . . . 28 Soldering by dipping or by solder wave . . . . . 28 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 28 Surface mount packages . . . . . . . . . . . . . . . . 28 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 28 16.3.2 16.3.3 16.4 17 18 19 20 21 22 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . Manual soldering . . . . . . . . . . . . . . . . . . . . . . Package related soldering information . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Data sheet status. . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . 29 29 30 30 31 31 31 31 31
(c) Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 October 2004 Document order number: 9397 750 13357
Published in The Netherlands

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